2n/pn/sst4117a series vishay siliconix document number: 70239 s-41231?rev. g, 28-jun-04 www.vishay.com 1 n-channel jfets 2n4117a pn4117a sst4117 2n4118a pn4118a sst4118 2n4119a pn4119a sst4119 product summary part number v gs(off) (v) v (br)gss min (v) g fs min ( s) i dss min ( a) 4117 ? 0.6 to ? 1.8 ? 40 70 30 4118 ? 1 to ? 3 ? 40 80 80 4119 ? 2 to ? 6 ? 40 100 200 features benefits applications ultra-low leakage: 0.2 pa very low current/voltage operation ultrahigh input impedance low noise insignificant signal loss/error voltage with high-impedance source low power consumption (battery) maximum signal output, low noise high sensitivity to low-level signals high-impedance transducer amplifiers smoke detector input infrared detector amplifier precision test equipment description the 2n/pn/sst4117a series of n-channel jfets provide ultra-high input impedance. these devices are specified with a 1-pa limit and typically operate at 0.2 pa. this makes them perfect choices for use as high-impedance sensitive front-end amplifiers. the hermetically sealed to-206af package allows full military processing per mil-s-19500 (see military information). the t o-226a (to-92) plastic package provides a low-cost option. the to-236 (sot-23) package provides surface-mount capability. both the pn and sst series are available in tape-and-reel for automated assembly (see packaging information). g s to-206af (to-72) d top view 2n4117a 2n4118a 2n4119a c 1 23 4 d g top view pn4117a pn4118a pn4119a to-226aa (to-92) s 1 2 3 d s g to-236 (sot-23) 2 3 1 top view sst4117 (t7)* sst4118 (t8)* sst4119 (t9)* *marking code for to-236 for applications information see an105.
2n/pn/sst4117a series vishay siliconix www.vishay.com 2 document number: 70239 s-41231?rev. g, 28-jun-04 absolute maximum ratings gate-source/gate-drain voltage ? 40v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . forward gate current 50 ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . storage t emperature : (2n prefix) ? 65 to 175 c . . . . . . . . . . . . . . . . . . . (pn, sst prefix) ? 55 to 150 c . . . . . . . . . . . . . operating junction temperature : (2n prefix) ? 55 to 175 c . . . . . . . . . . . . . . . . . . . (pn, sst prefix) ? 55 to 150 c . . . . . . . . . . . . . lead temper ature ( 1 / 16 ? from case for 10 sec.) 300 c . . . . . . . . . . . . . . . . . . . power dissipation (case 25 c) : (2n prefix) a 300 mw . . . . . . . . . . . . . . . . . . . . . . (pn, sst prefix) b 350 mw . . . . . . . . . . . . . . . . notes a. derate 2 mw/ c above 25 c b. derate 2.8 mw/ c above 25 c specifications (t a = 25 c unless otherwise noted) limits 4117 4118 4119 parameter symbol test conditions typ a min max min max min max unit static gate-source breakdown voltage v (br)gss i g = ? 1 a , v ds = 0 v ? 70 ? 40 ? 40 ? 40 v gate-source cutoff voltage v gs(off) v ds = 10 v, i d = 1 na ? 0.6 ? 1.8 ? 1 ? 3 ? 2 ? 6 v saturation drain current i dss v ds = 10 v, v gs = 0 v 30 90 80 240 200 600 a v gs = ? 20 v v ds = 0 v ? 0.2 ? 1 ? 1 ? 1 pa gt r c t i v gs = ? 20 v v ds = 0 v t a = 150 c 2n ? 0.4 ? 2.5 ? 2.5 ? 2.5 na gate reverse current i gss v gs = ? 10 v pn ? 0.2 ? 1 ? 1 ? 1 pa v gs = ? 10 v v ds = 0 v sst ? 0.2 ? 10 ? 10 ? 10 pa v gs = ? 10 v v ds = 0 v t a = 100 c pn/sst ? 0.03 ? 2.5 ? 2.5 ? 2.5 na gate operating current b i g v dg = 15 v, i d = 30 a ? 0.2 pa drain cutoff current b i d(off) v ds = 10 v, v gs = ? 8 v 0.2 pa gate-source forward voltage b v gs(f) i g = 1 ma , v ds = 0 v 0.7 v dynamic common-source forward t ransconductance g fs v d s = 10 v, v gs = 0 v 70 210 80 250 100 330 s common-source output conductance g os v ds = 10 v , v gs = 0 v f = 1 khz 3 5 10 s common-source c i 2n/pn 1.2 3 3 3 common-source input capacitance c iss v ds = 10 v v gs = 0 v sst 1.2 pf common-source c v gs = 0 v f = 1 mhz 2n/pn 0.3 1.5 1.5 1.5 pf common-source reverse transfer capacitance c rss f = 1 mhz sst 0.3 equivalent input noise voltage b e n v ds = 10 v, v gs = 0 v f = 1 khz 15 nv ? hz notes a. typical values are for design aid only, not guaranteed nor subject to production testing. nt b. this parameter not registered with jedec.
2n/pn/sst4117a series vishay siliconix document number: 70239 s-41231?rev. g, 28-jun-04 www.vishay.com 3 typical characteristics (t a = 25 c unless otherwise noted) gate leakage current drain current and transconductance vs. gate-source cutoff voltage common-source forward transconductance vs. drain current on-resistance and output conductance vs. gate-source cutoff voltage output characteristics 1000 0 ? 5 ? 4 ? 3 ? 2 ? 1 800 0 06 30 g fs i dss t a = 25 c 100 ma i gss @ 25 c 100 ma output characteristics 500 400 300 100 0 ? 0.5 v ? 1.0 v ? 2.0 v ? 1.5 v v gs = 0 v 15 0 ? 3 ? 5 ? 4 ? 2 ? 1 12 9 6 3 0 0.01 0.1 1 200 160 120 40 0 5 4 3 2 1 0 r ds @ i d = 10 a, v gs = 0 v g os @ v ds = 10 v, v gs = 0 v f = 1 khz r ds g os t a = ? 55 c 125 c v ds = 10 v f = 1 khz 100 016 8 420 80 60 20 0 v gs = 0 v ? 0.5 v ? 0.4 v ? 0.3 v ? 0.2 v ? 0.1 v v gs(off) ? gate-source cutoff voltage (v) v ds ? drain-source voltage (v) v dg ? drain-gate voltage (v) i d ? drain current (ma) v gs(off) ? gate-source cutoff voltage (v) v ds ? drain-source voltage (v) 600 400 200 12 18 24 80 25 c v gs(off) = ? 0.7 v v gs(off) = ? 2.5 v 200 40 12 0 16 8 420 12 i dss @ v ds = 10 v, v gs = 0 v g fs @ v ds = 10 v, v gs = 0 v f = 1 khz 300 240 180 120 60 0 10 ma 0.1 pa 1 pa 10 pa 100 pa 1 na i gss @ 125 c v gs(off) = ? 2.5 v 10 ma v gs(off) = ? 2.5 v i dss ? saturation drain current ( a) g fs ? forward transconductance ( s) g os ? output conductance ( s) g fs ? forward transconductance ( s) i g ? gate leakage i d ? drain current ( a) i d ? drain current ( a) t a = 125 c r ds(on) ? drain-source on-resistance (k )
2n/pn/sst4117a series vishay siliconix www.vishay.com 4 document number: 70239 s-41231?rev. g, 28-jun-04 typical characteristics (t a = 25 c unless otherwise noted) 300 240 180 60 0 transconductance vs. gate-source voltage transfer characteristics transconductance vs. gate-source voltage transfer characteristics common-source input capacitance vs. gate-source voltage circuit voltage gain vs. drain current 500 0 ? 4 ? 5 ? 2 ? 1 0 t a = ? 55 c 125 c 100 0 ? 0.4 ? 0.2 ? 0.8 ? 1.0 80 60 20 0 200 160 120 40 0 t a = 125 c ? 55 c t a = ? 55 c 125 c v ds = 10 v v ds = 10 v f = 1 khz v ds = 10 v v ds = 10 v f = 1 khz t a = ? 55 c 125 c 0.1 1 0.01 100 0 v gs(off) = ? 0.7 v ? 2.5 v r l 10 v i d assume v dd = 15 v, v ds = 5 v 2.0 0 f = 1 mhz v ds = 0 v 10 v v gs ? gate-source voltage (v) i d ? drain current (ma) v gs ? gate-source voltage (v) v gs ? gate-source voltage (v) v gs ? gate-source voltage (v) v gs ? gate-source voltage (v) v gs(off) = ? 0.7 v v gs(off) = ? 0.7 v v gs(off) = ? 2.5 v v gs(off) = ? 2.5 v 40 80 60 20 40 80 25 c 25 c ? 0.6 0 ? 0.4 ? 0.2 ? 0.8 ? 1.0 ? 0.6 ? 30 ? 4 ? 5 ? 2 ? 1 ? 3 0 ? 16 ? 20 ? 8 ? 4 ? 12 120 400 300 100 200 1.6 1.2 0.4 0.8 a v g fs r l 1 r l g os 25 c 25 c g fs ? forward transconductance ( s) g fs ? forward transconductance ( s) a v ? voltage gain c iss ? input capacitance (pf) i d ? drain current ( a) i d ? drain current ( a)
2n/pn/sst4117a series vishay siliconix document number: 70239 s-41231?rev. g, 28-jun-04 www.vishay.com 5 typical characteristics (t a = 25 c unless otherwise noted) 2 1 0 0.01 0.1 1 equivalent input noise voltage vs. frequency i d ? drain current (ma) common-source reverse feedback capacitance vs. gate-source voltage on-resistance vs. drain current output conductance vs. drain current v ds = 10 v f = 1 khz 0.5 0 ? 8 ? 20 ? 16 ? 4 0.4 0.3 0.1 0 f = 1 mhz v ds = 0 v 10 v 10 100 1 k 100 k 10 k 200 0 v ds = 10 v i d = 10 ma v gs = 0 v t a = ? 55 c 125 c i d ? drain current (ma) v gs ? gate-source voltage (v) f ? frequency (hz) 0.2 160 120 40 80 ? 12 v gs(off) = ? 2.5 v 20 0 0.01 0.1 1 16 12 8 4 v gs(off) = ? 0.7 v ? 2.5 v t a = 25 c 25 c e n ? noise voltage nv / hz r ds(on) ? drain-source on-resistance ( ? ) g os ? output conductance ( s) c rss ? reverse feedback capacitance (pf)
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
|
